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[IEEE 2010 IEEE International Integrated Reliability Workshop (IIRW) - S. Lake Tahoe, CA, USA (2010.10.17-2010.10.21)] 2010 IEEE International Integrated Reliability Workshop Final Report - Investigation into the effect of a “through silicon via”-process on the MOS transistor reliability of a standard 0.13µm CMOS technology
Martin, Andreas, Borucki, Ludger, Reisinger, Hans, Schlunder, ChristianAnnée:
2010
Langue:
english
DOI:
10.1109/iirw.2010.5706485
Fichier:
PDF, 305 KB
english, 2010