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Room-Temperature 1.6 µm Electroluminescence from p + -Si/β-FeSi 2 / n + -Si Diodes on Si(001) without High-Temperature Annealing
Koizumi, Tomoaki, Murase, Shigemitsu, Suzuno, Mitsushi, Suemasu, TakashiVolume:
1
Langue:
english
Journal:
Applied Physics Express
DOI:
10.1143/apex.1.051405
Date:
April, 2008
Fichier:
PDF, 381 KB
english, 2008