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Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition
Masumoto, Keiko, Kudou, Chiaki, Tamura, Kentaro, Nishio, Johji, Ito, Sachiko, Kojima, Kazutoshi, Ohno, Toshiyuki, Okumura, HajimeVolume:
381
Langue:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.07.025
Date:
October, 2013
Fichier:
PDF, 1.85 MB
english, 2013