(Me5C5)SiH3 and (Me5C5)2SiH2 as precursors for low-temperature remote plasma-enhanced CVD of thin Si3N4 and SiO2 films
Jürgen Dahlhaus, Prof. Peter Jutzi, Dr. Hubert-Joachim Frenck, Dr. Wilhelm KulischVolume:
5
Année:
1993
Langue:
english
Pages:
4
DOI:
10.1002/adma.19930050510
Fichier:
PDF, 469 KB
english, 1993