[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG
Shinohara, K., Regan, D., Corrion, A., Brown, D., Tang, Y., Wong, J., Candia, G., Schmitz, A., Fung, H., Kim, S., Micovic, M.Année:
2012
Langue:
english
DOI:
10.1109/IEDM.2012.6479113
Fichier:
PDF, 1.48 MB
english, 2012
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