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Effects of post-oxidation on leakage current of high-voltage AlGaN/GaN Schottky barrier diodes on Si(111) substrates
Ha, Min-Woo, Han, Min-Koo, Hahn, Cheol-KooVolume:
81
Langue:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2012.11.006
Date:
March, 2013
Fichier:
PDF, 553 KB
english, 2013