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In situ investigation by IR ellipsometry of the growth and interfaces of amorphous silicon and related materials
R. Ossikovski, H. Shirai, B. DrévillonVolume:
234
Année:
1993
Langue:
english
Pages:
4
DOI:
10.1016/0040-6090(93)90286-x
Fichier:
PDF, 373 KB
english, 1993