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The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT)
Florin Udrea, Gehan A.J. Amaratunga, Qin HuangVolume:
37
Année:
1994
Langue:
english
Pages:
8
DOI:
10.1016/0038-1101(94)90018-3
Fichier:
PDF, 693 KB
english, 1994