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On the effect of non-degenerate doping of polysilicon gate in thin oxide MOS-devices—Analytical modeling
Predrag Habaš, Siegfried SelberherrVolume:
33
Année:
1990
Langue:
english
Pages:
6
DOI:
10.1016/0038-1101(90)90134-z
Fichier:
PDF, 638 KB
english, 1990