Electrical characterization studies of p-type Ge, Ge1−ySny, and Si0.09Ge0.882Sn0.028 grown on n-Si substrates
Harris, Thomas R., Ryu, Mee-Yi, Yeo, Yung Kee, Beeler, Richard T., Kouvetakis, JohnVolume:
14
Langue:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2013.11.009
Date:
March, 2014
Fichier:
PDF, 649 KB
english, 2014