The Al2O3 gate insulator modified by SiO2 film to improve the performance of IGZO TFTs
Ding, Xingwei, Zhang, Jianhua, Li, Jun, Shi, Weimin, Zhang, Hao, Jiang, Xueyin, Zhang, ZhilinVolume:
69
Langue:
english
Journal:
Superlattices and Microstructures
DOI:
10.1016/j.spmi.2014.02.001
Date:
May, 2014
Fichier:
PDF, 1.11 MB
english, 2014