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Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability
Fan, Yang-Shun, Liu, Po-Tsun, Hsu, Ching-HuiVolume:
549
Langue:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.09.033
Date:
December, 2013
Fichier:
PDF, 1.14 MB
english, 2013