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Comparison of physical and electrical properties of GZO/ZnO buffer layer and GZO as source and drain electrodes of α-IGZO thin-film transistors
Wu, Jia-Ling, Lin, Han-Yu, Su, Bo-Yuan, Chen, Yu-Cheng, Chu, Sheng-Yuan, Liu, Ssu-Yin, Chang, Chia-Chiang, Wu, Chin-JyiVolume:
592
Langue:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2013.12.115
Date:
April, 2014
Fichier:
PDF, 2.27 MB
english, 2014