
[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Fabrication and characteristics of fully transparent Aluminum-doped zinc oxide thin-film transistors
Dongfang Shan,, Dedong Han,, Fuqing Huang,, Yu Tian,, Suoming Zhang,, Yingying Cong,, Yi Wang,, Lifeng Liu,, Xing Zhang,, Shengdong Zhang,Année:
2013
Langue:
english
DOI:
10.1109/edssc.2013.6628226
Fichier:
PDF, 401 KB
english, 2013