Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs
Galiev, G.B., Vasil'evskii, I.S., Klimov, E.А., Pushkarev, S.S., Klochkov, A.N., Maltsev, P.P, Presniakov, M.Yu., Trunkin, I.N., Vasiliev, A.L.Volume:
392
Langue:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.01.043
Date:
April, 2014
Fichier:
PDF, 5.37 MB
english, 2014
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