The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si (111) substrates
Zhe, Liu, Xiao-Liang, Wang, Jun-Xi, Wang, Guo-Xin, Hu, Lun-Chun, Guo, Jin-Min, LiVolume:
16
Langue:
english
Journal:
Chinese Physics
DOI:
10.1088/1009-1963/16/5/050
Date:
May, 2007
Fichier:
PDF, 957 KB
english, 2007