Nanoscale Selective Plasma Etching of Ultrathin HfO 2 Layers on GaAs for Advanced Complementary Metal–Oxide–Semiconductor Devices
Anguita, Jose, Benedicto, Marcos, Alvaro, Raquel, Galiana, Beatriz, Tejedor, PalomaVolume:
49
Langue:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.49.106504
Date:
October, 2010
Fichier:
PDF, 190 KB
english, 2010