Realization of optically active strained InAs island quantum boxes on GaAs(100) via molecular beam epitaxy and the role of island induced strain fields
Qianghua Xie, P. Chen, A. Kalburge, T.R. Ramachandran, A. Nayfonov, A. Konkar, A. MadhukarVolume:
150
Année:
1995
Langue:
english
Pages:
7
DOI:
10.1016/0022-0248(95)80235-5
Fichier:
PDF, 627 KB
english, 1995