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The growth properties of SiGe films on Si(100) using Si2H6 gas and Ge solid source molecular beam epitaxy
Hiroyuki Wado, Tadami Shimizu, Makoto Ishida, Tetsuro NakamuraVolume:
147
Année:
1995
Langue:
english
Pages:
6
DOI:
10.1016/0022-0248(94)00859-0
Fichier:
PDF, 433 KB
english, 1995