Effect of surface passivation by SiN/SiO2of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method
Gassoumi, Malek, Mosbahi, Hana, Zaidi, Mohamed Ali, Gaquiere, Christophe, Maaref, HassenVolume:
47
Langue:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613070087
Date:
July, 2013
Fichier:
PDF, 212 KB
english, 2013