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[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - A novel structure of high voltage SOI device with Composite Dielectric buried layer
Fan, Jie, Luo, Xiaorong, Zhang, Bo, Li, ZhaojiAnnée:
2011
Langue:
english
DOI:
10.1109/EDSSC.2011.6117719
Fichier:
PDF, 117 KB
english, 2011