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Dielectric Function Effects Due to Isovalent Monolayers of III-Elements Buried in GaAs, GaP, and AlGaAs
H. Schmidt, B. Rheinländer, A. Kasic, V. GottschalchVolume:
164
Année:
1997
Langue:
english
Pages:
5
DOI:
10.1002/1521-396x(199711)164:13.0.co;2-g
Fichier:
PDF, 158 KB
english, 1997