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Hopping transport and the Hall effect near the insulator–metal transition in electrochemically gated poly(3-hexylthiophene) transistors
Wang, Shun, Ha, Mingjing, Manno, Michael, Daniel Frisbie, C, Leighton, CVolume:
3
Langue:
english
Journal:
Nature Communications
DOI:
10.1038/ncomms2213
Date:
November, 2012
Fichier:
PDF, 794 KB
english, 2012