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Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC
Castaldini, A., Cavallini, A., Rigutti, L., Pizzini, S., Le Donne, A., Binetti, S.Volume:
99
Année:
2006
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2160708
Fichier:
PDF, 318 KB
english, 2006