[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing
Dewey, G., Chu-Kung, B., Boardman, J., Fastenau, J. M., Kavalieros, J., Kotlyar, R., Liu, W. K., Lubyshev, D., Metz, M., Mukherjee, N., Oakey, P., Pillarisetty, R., Radosavljevic, M., Then, H. W., ChaAnnée:
2011
Langue:
english
DOI:
10.1109/IEDM.2011.6131666
Fichier:
PDF, 620 KB
english, 2011
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