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[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - The evolution of the HfSiOx/Si interface along with the increase of forming gas annealing temperature
Yang, Wen, Geng, Yang, Fang, Run-chen, Sun, Qing-Qing, Lu, Hong-liang, Zhou, Peng, Zhang, David WeiAnnée:
2012
Langue:
english
DOI:
10.1109/ICSICT.2012.6467832
Fichier:
PDF, 522 KB
english, 2012