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[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Uniaxially Strained Ge-Rich SiGe Nanowire Channel Technology for High-Performance CMOS
Ikeda, Keiji, Oda, Minoru, Irisawa, Toshifumi, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Tezuka, TsutomuAnnée:
2012
Langue:
english
DOI:
10.1109/ISTDM.2012.6222446
Fichier:
PDF, 533 KB
english, 2012