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Temperature dependence of heavy ion-induced current transients in Si epilayer devices
Laird, J.S., Hirao, T., Onoda, S., Mori, H., Itoh, H.Volume:
49
Langue:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2002.1039672
Date:
June, 2002
Fichier:
PDF, 286 KB
english, 2002