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Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation
Skarlatos, D., Tsamis, C.Volume:
102
Année:
2007
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2773695
Fichier:
PDF, 1.18 MB
english, 2007