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Trapping properties of LiNbO[sub 3]/AlGaN/GaN metal-ferroelectric-semiconductor heterostructure characterized by temperature dependent conductance measurements
Zeng, Huizhong, Hao, Lanzhong, Luo, Wenbo, Liao, Xiuwei, Huang, Wen, Lin, Yuan, Li, YanrongVolume:
107
Année:
2010
Langue:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3374689
Fichier:
PDF, 464 KB
english, 2010