Low noise, low power consumption high electron mobility transistors amplifier, for temperatures below 1 K
Oukhanski, N., Grajcar, M., Ilichev, E., Meyer, H.-G.Volume:
74
Année:
2003
Langue:
english
DOI:
10.1063/1.1532539
Fichier:
PDF, 475 KB
english, 2003