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[IEEE 2010 Radiation Effects Data Workshop - denver, CA, USA (2010.07.20-2010.07.23)] 2010 IEEE Radiation Effects Data Workshop - Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)
Heidecker, Jason, Allen, Gregory, Sheldon, DouglasAnnée:
2010
Langue:
english
DOI:
10.1109/redw.2010.5619499
Fichier:
PDF, 465 KB
english, 2010