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[IEEE 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - Nashville, TN, USA (1988.11.6-1988.11.9)] 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988. - A GaAs MESFET 16*16 crosspoint switch at 1700 Mbits/sec
Anderson, C.J., Magerlein, J.H., Scott, G.J., Bermon, S., Callegari, A., Feder, J.D., Greiner, J.H., Hoh, P.D., Hovel, H.J., Pomerene, A.T.S., Roche, P., Thomas, M.Année:
1988
Pages:
4
DOI:
10.1109/gaas.1988.11031
Fichier:
PDF, 392 KB
1988