
Device physics and guiding principles for the design of double-gate tunneling field effect transistor with silicon-germanium source heterojunction
Toh, Eng-Huat, Wang, Grace Huiqi, Chan, Lap, Samudra, Ganesh, Yeo, Yee-ChiaVolume:
91
Année:
2007
Langue:
english
DOI:
10.1063/1.2823606
Fichier:
PDF, 665 KB
english, 2007