Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (∼9.4 μm) room temperature operating quantum-cascade lasers
K. Kosiel, J. Kubacka-Traczyk, I. Sankowska, A. Szerling, P. Gutowski, M. BugajskiVolume:
20
Langue:
english
Pages:
8
DOI:
10.2478/s11772-012-0029-7
Date:
September, 2012
Fichier:
PDF, 6.13 MB
english, 2012
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