A new model for device degradation in low-temperature N-channel polycrystalline silicon TFTs under AC stress
Toyota, Y., Shiba, T., Ohkura, M.Volume:
51
Année:
2004
Langue:
english
Pages:
7
DOI:
10.1109/ted.2004.828163
Fichier:
PDF, 362 KB
english, 2004