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Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D “atomistic” simulation study
Asenov, A.Volume:
45
Année:
1998
Langue:
english
Pages:
9
DOI:
10.1109/16.735728
Fichier:
PDF, 342 KB
english, 1998