A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5-μm transistors subjected to process-induced damage
Hsing-Huang Tseng, Tobin, P.J., Hayden, J.D., Chang, K.-M., Miller, J.W.Volume:
40
Année:
1993
Langue:
english
Pages:
6
DOI:
10.1109/16.199368
Fichier:
PDF, 621 KB
english, 1993