Operation model with carrier-density dependent mobility for amorphous In–Ga–Zn–O thin-film transistors
Katsumi Abe, Kenji Takahashi, Ayumu Sato, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo HosonoVolume:
520
Année:
2012
Langue:
english
Pages:
5
DOI:
10.1016/j.tsf.2011.10.060
Fichier:
PDF, 804 KB
english, 2012