InAs/InGaAs Quantum Dot Microcavity Diode Structures on GaAs Substrates Emitting in the 1.25–1.33 μm Wavelength Range
N.A. Maleev, I.L. Krestnikov, A.R. Kovsh, A.V. Sakharov, V.M. Ustinov, S.S. Mikhrin, W. Passenberg, E. Pawlowski, C. Möller, A.F. Tsatsulnikov, H. Künzel, N.N. Ledentsov, Zh.I. Alferov, D. BimbergVolume:
224
Année:
2001
Langue:
english
Pages:
4
DOI:
10.1002/(sici)1521-3951(200104)224:33.0.co;2-t
Fichier:
PDF, 90 KB
english, 2001