
[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - 2-stack 1D-1R Cross-point Structure with Oxide Diodes as Switch Elements for High Density Resistance RAM Applications
Lee, Myoung-Jae, Park, Youngsoo, Kang, Bo-Soo, Ahn, Seung-Eon, Lee, Changbum, Kim, Kihwan, Xianyu, Wenxu., Stefanovich, G., Lee, Jung-Hyun, Chung, Seok-Jae, Kim, Yeon-Hee, Lee, Chang-Soo, Park, Jong-BAnnée:
2007
Langue:
english
Pages:
4
DOI:
10.1109/iedm.2007.4419061
Fichier:
PDF, 3.92 MB
english, 2007