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Mechanism for Conversion of the Conductivity Type in Arsenic-Doped p-CdxHg1–xTe Subject to Ionic Etching
V. V. Bogoboyashchii, A. P. Vlasov, I. I. IzhninVolume:
44
Langue:
english
Pages:
10
DOI:
10.1023/a:1011312902981
Date:
January, 2001
Fichier:
PDF, 87 KB
english, 2001