Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and raman spectroscopy
P. J. Mcnally, J. W. Curley, M. Bolt, A. Reader, T. Tuomi, R. Rantama¨ki, A. N. Danilewsky, I. DeWolfVolume:
10
Langue:
english
Pages:
8
DOI:
10.1023/a:1008993322697
Date:
July, 1999
Fichier:
PDF, 257 KB
english, 1999