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Determination of the carrier concentration in dopedn-GaAs layers by Raman and light reflection spectroscopies
L. P. Avakyants, P. Yu. Bokov, N. A. Volchkov, I. P. Kazakov, A. V. ChervyakovVolume:
102
Langue:
english
Pages:
5
DOI:
10.1134/s0030400x07050104
Date:
May, 2007
Fichier:
PDF, 228 KB
english, 2007