How the type of bombarding ion affects the formation of radiation defects in silicon
M. Yu. Barabanenko, A. V. Leonov, V. N. Mordkovich, N. M. Omel’yanovskayaVolume:
32
Langue:
english
Pages:
3
DOI:
10.1134/1.1187419
Date:
May, 1998
Fichier:
PDF, 62 KB
english, 1998