V.A. Odnoblyudov : rechercher sur Z-Library

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51

Impurity resonance states in semiconductors

V. Ya. Aleshkin, L. V. Gavrilenko, M. A. Odnoblyudov, I. N. Yassievich

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 482 KB

english, 2008

52

Spin-dependent resonant tunneling in symmetrical double-barrier structures

Glazov, M., Alekseev, P., Odnoblyudov, M., Chistyakov, V., Tarasenko, S., Yassievich, I.

Journal:

Physical Review B

Année:

2005

Langue:

english

Fichier:

PDF, 72 KB

english, 2005

53

Reduction of mechanical stresses in GaN/sapphire templates via formation of regular porous structure

Ivan N. Ivukin, Vladislav E. Bougrov, Maxim A. Odnoblyudov, Alexey E. Romanov

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 369 KB

english, 2012

54

Modelling and optimization of electric current spreading in III-nitride LEDs

S. S. Suslov, V. E. Bougrov, M. A. Odnoblyudov, A. E. Romanov

Journal:

physica status solidi (c)

Année:

2012

Langue:

english

Fichier:

PDF, 400 KB

english, 2012

55

InGaN-based 405 nm near-ultraviolet light emitting diodes on pillar patterned sapphire substrates

Törmä, Pekka T., Ali, Muhammad, Svensk, Olli, Suihkonen, Sami, Sopanen, Markku, Lipsanen, Harri, Mulot, Mikael, Odnoblyudov, Maxim A., Bougrov, Vladislav E.

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 230 KB

english, 2010

56

Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

M. Ali, A.E. Romanov, S. Suihkonen, O. Svensk, S. Sintonen, M. Sopanen, H. Lipsanen, V.N. Nevedomsky, N.A. Bert, M.A. Odnoblyudov, V.E. Bougrov

Journal:

Journal of Crystal Growth

Année:

2012

Langue:

english

Fichier:

PDF, 676 KB

english, 2012

57

Mechanical stress control in GaN films on sapphire substrate via patterned nanocolumn interlayer formation

Artemiev, Dmitry, Bougrov, Vladislav, Odnoblyudov, Maxim, Romanov, Alexey

Journal:

physica status solidi (c)

Année:

2013

Langue:

english

Fichier:

PDF, 462 KB

english, 2013

58

Simulation of a stress-strain state in thin structured gallium nitride films on sapphire substrates

I. N. Ivukin, D. M. Artem’ev, V. E. Bugrov, M. A. Odnoblyudov, A. E. Romanov

Journal:

Physics of the Solid State

Année:

2012

Langue:

english

Fichier:

PDF, 308 KB

english, 2012

59

Enhancement of near-UV GaN LED light extraction efficiency by GaN/sapphire template patterning

Ali, M, Svensk, O, Riuttanen, L, Kruse, M, Suihkonen, S, Romanov, A E, Törmä, P T, Sopanen, M, Lipsanen, H, Odnoblyudov, M A, Bougrov, V E

Journal:

Semiconductor Science and Technology

Année:

2012

Langue:

english

Fichier:

PDF, 756 KB

english, 2012

60

Donor states in modulation-doped Si/SiGe heterostructures

Blom, A., Odnoblyudov, M. A., Yassievich, I. N., Chao, K.-A.

Journal:

Physical Review B

Année:

2003

Langue:

english

Fichier:

PDF, 219 KB

english, 2003

61

Electroluminescence at 7 terahertz from phosphorus donors in silicon

Lv, P.-C., Troeger, R. T., Adam, T. N., Kim, S., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 367 KB

english, 2004

62

Effects of light scattering in optical coatings on energy losses in LED devices

Lipnitskaya, S. N., Mynbaev, K. D., Bugrov, V. E., Kovsh, A. R., Odnoblyudov, M. A., Romanov, A. E.

Journal:

Technical Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 179 KB

english, 2013

63

Widely tunable continuous-wave THz laser

Gousev, Yu. P., Altukhov, I. V., Korolev, K. A., Sinis, V. P., Kagan, M. S., Haller, E. E., Odnoblyudov, M. A., Yassievich, I. N., Chao, K.-A.

Journal:

Applied Physics Letters

Année:

1999

Langue:

english

Fichier:

PDF, 222 KB

english, 1999

64

Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates

Semenova, E S, Zhukov, A E, Mikhrin, S S, Egorov, A Yu, Odnoblyudov, V A, Vasil ev, A P, Nikitina, E V, Kovsh, A R, Kryzhanovskaya, N V, Gladyshev, A G, Blokhin, S A, Musikhin, Yu G, Maximov, M V, She

Journal:

Année:

2004

Langue:

english

Fichier:

PDF, 257 KB

english, 2004

65

Physical properties and efficiency of GaNP light emitting diodes

Chamings, J., Ahmed, S., Sweeney, S. J., Odnoblyudov, V. A., Tu, C. W.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 381 KB

english, 2008

66

Terahertz emission from electrically pumped gallium doped silicon devices

Lv, P.-C., Troeger, R. T., Kim, S., Ray, S. K., Goossen, K. W., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 311 KB

english, 2004

67

Polaron Effects in Quantum Dots

Odnoblyudov, M. A., Yassievich, I. N., Chao, K. A.

Journal:

Physical Review Letters

Année:

1999

Langue:

english

Fichier:

PDF, 69 KB

english, 1999

68

Resonant states induced by impurities in heterostructures

Blom, A., Odnoblyudov, M. A., Yassievich, I. N., Chao, K. A.

Journal:

Physical Review B

Année:

2002

Langue:

english

Fichier:

PDF, 116 KB

english, 2002

69

Growth and fabrication of InGaNP-based yellow-red light emitting diodes

Odnoblyudov, V. A., Tu, C. W.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 338 KB

english, 2006

70

Optical properties of InGaNP quantum wells grown on GaP (100) substrates by gas-source molecular beam epitaxy

Odnoblyudov, V. A., Tu, C. W.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 358 KB

english, 2006

71

superlattices

Jin, Kuijuan, Odnoblyudov, M., Shimada, Y., Hirakawa, K., Chao, K. A.

Journal:

Physical Review B

Année:

2003

Langue:

english

Fichier:

PDF, 49 KB

english, 2003

72

Resonant states induced by shallow acceptors in uniaxially strained semiconductors

Odnoblyudov, M. A., Yassievich, I. N., Chistyakov, V. M., Chao, K. A.

Journal:

Physical Review B

Année:

2000

Langue:

english

Fichier:

PDF, 135 KB

english, 2000

73

Towards Si[sub 1−x]Ge[sub x] quantum-well resonant-state terahertz laser

I. V. Altukhov, E. G. Chirkova, V. P. Sinis, M. S. Kagan, Y. P. Gousev, S. G. Thomas, K. L. Wang, M. A. Odnoblyudov, I. N. Yassievich

Année:

2001

Langue:

english

Fichier:

PDF, 362 KB

english, 2001

74

Scattering-assisted terahertz gain in semiconductor superlattices in the Wannier-Stark-Ladder regime

Tarakanov, Yu. A., Odnoblyudov, M. A., Chao, K. A., Sekine, N., Hirakawa, K.

Journal:

Physical Review B

Année:

2006

Langue:

english

Fichier:

PDF, 180 KB

english, 2006

75

resonant-state terahertz laser

Odnoblyudov, M. A., Prokofiev, A. A., Yassievich, I. N., Chao, K. A.

Journal:

Physical Review B

Année:

2004

Langue:

english

Fichier:

PDF, 163 KB

english, 2004

76

Mechanism of population inversion in uniaxially strained p -Ge continuous-wave lasers

Odnoblyudov, M. A., Yassievich, I. N., Kagan, M. S., Chao, K. A.

Journal:

Physical Review B

Année:

2000

Langue:

english

Fichier:

PDF, 72 KB

english, 2000

77

The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices

Lv, P.-C., Zhang, X., Kolodzey, J., Odnoblyudov, M. A., Yassievich, I. N.

Journal:

Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 333 KB

english, 2005

78

Scattering-assisted electric current in semiconductor superlattices in the Wannier-Stark regime

Tarakanov, Yu. A., Vettchinkina, V., Odnoblyudov, M. A., Chao, K. A., Sekine, N., Hirakawa, K.

Journal:

Physical Review B

Année:

2005

Langue:

english

Fichier:

PDF, 136 KB

english, 2005

79

Growth and characterization of AlGaNP on GaP(100) substrates

Odnoblyudov, V. A., Tu, C. W.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 255 KB

english, 2006

80

Mechanism of terahertz lasing in SiGe/Si quantum wells

Blom, A., Odnoblyudov, M. A., Cheng, H. H., Yassievich, I. N., Chao, K. A.

Journal:

Applied Physics Letters

Année:

2001

Langue:

english

Fichier:

PDF, 236 KB

english, 2001

81

[IEEE 2008 66th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2008.06.23-2008.06.25)] 2008 Device Research Conference - Materials and Light-Emitting Diode Properties of Dilute-Nitride GaNP/GaP Heterostructures

Tu, C. W., Odnoblyudov, V. A., Chamings, J., Ahmed, S., Sweeney, S. J., Keogh, D. M.

Année:

2008

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2008

82

Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters

Lv, P.-C., Troeger, R. T., Zhang, X., Adam, T. N., Kolodzey, J., Odnoblyudov, M. A., Yassievich, I. N.

Journal:

Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 435 KB

english, 2005

83

Population Inversion Induced by Resonant States in Semiconductors

Odnoblyudov, M. A., Yassievich, I. N., Kagan, M. S., Galperin, Yu. M., Chao, K. A.

Journal:

Physical Review Letters

Année:

1999

Langue:

english

Fichier:

PDF, 90 KB

english, 1999

84

[IEEE 2013 IEEE 12th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM) - Sudak, Ukraine (2013.09.11-2013.09.13)] 2013 IEEE 12th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM 2013) - Design optimization of light emitting diode module «chip-on-board» for light extraction increase

Lipnitskaya, S. N., Mynbaev, K. D., Nikulina, L. A., Kramnik, V. V., Bougrov, V. E., Kovsh, A. R., Odnoblyudov, M. A., Romanov, A. E.

Année:

2013

Langue:

english

Fichier:

PDF, 2.99 MB

english, 2013

85

THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

VETTCHINKINA, V. A., BLOM, A., ODNOBLYUDOV, M. A.

Journal:

International Journal of Modern Physics B

Année:

2005

Langue:

english

Fichier:

PDF, 456 KB

english, 2005

86

TERAHERTZ EMITTERS AND DETECTORS BASED ON SiGe NANOSTRUCTURES

KOLODZEY, J., ADAM, T. N., TROEGER, R. T., LV, P.-C., RAY, S. K., YASSIEVICH, I., ODNOBLYUDOV, M., KAGAN, M.

Journal:

International Journal of Nanoscience

Année:

2004

Langue:

english

Fichier:

PDF, 149 KB

english, 2004

87

Investigation of light extraction from light emitting module chip-on-board

Lipnitskaya, Svetlana, Mynbaev, Karim, Nikulina, Lidiya, Kramnik, Vladimir, Bougrov, Vladislav, Kovsh, Alexey, Odnoblyudov, Maxim, Romanov, Alexey

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 640 KB

english, 2014

88

Resonance Acceptor States and THz Generation in Uniaxially Strained p-Ge

Altukhov, I.V., Chirkova, E.G., Kagan, M.S., Korolev, K.A., Sinis, V.P., Schmalz, K., Odnoblyudov, M.A., Yassievich, I.N.

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 322 KB

1997

89

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Impurity induced resonant states in modulation doped heterostructures

Odnoblyudov, M. A., Blom, A., Yassievich, Irina N., Chao, K. A., Alferov, Zhores I., Esaki, Leo

Année:

2012

Langue:

english

Fichier:

PDF, 68 KB

english, 2012

90

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors.

Kagan, Miron S., Altukhov, Igor, Sinis, Valeriy, Chirkova, Elena, Paprotskiy, Stanislav, Yassievich, Irina, Odnoblyudov, Maksim, Prokofiev, Aleksey, Kolodzey, James

Année:

2006

Langue:

english

Fichier:

PDF, 493 KB

english, 2006

91

[IEEE International Conference on Molecular Bean Epitaxy - San Francisco, CA, USA (15-20 Sept. 2002)] International Conference on Molecular Bean Epitaxy - InAs/InGaAsN quantum dots emitting at 1.55 micron grown by molecular beam epitaxy

Ustinov, V.M., Egorov, A.Yu., Odnoblyudov, V.A., Kryzhanovskaya, N.V., Tsatsul'nikov, A.F., Alferov, Zh.I.

Année:

2002

Langue:

english

Fichier:

PDF, 90 KB

english, 2002

92

AIP Conference Proceedings [AIP Publishing LLC INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013 - Bologna, Italy (21–26 July 2013)] - Reaction-kinetics model for threading dislocation density reduction in GaN porous layer

Artemiev, D. M., Orlova, T. S., Bougrov, V. E., Odnoblyudov, M. A., Romanov, A. E.

Année:

2014

Langue:

english

Fichier:

PDF, 241 KB

english, 2014

93

Gas-source molecular-beam epitaxial growth of Ga(In)NP on GaP(100) substrates for yellow-amber light-emitting devices

V. A. Odnoblyudov, C. W. Tu

Année:

2005

Langue:

english

Fichier:

PDF, 773 KB

english, 2005

94

Amber GaNP-based light-emitting diodes directly grown on GaP(100) substrates

V. A. Odnoblyudov, C. W. Tu

Année:

2006

Langue:

english

Fichier:

PDF, 424 KB

english, 2006

95

Thermodynamic analysis of the MBE growth of GaInAsN

Odnoblyudov, V A, Egorov, A Yu, Kovsh, A R, Zhukov, A E, Maleev, N A, Semenova, E S, Ustinov, V M

Journal:

Semiconductor Science and Technology

Année:

2001

Langue:

english

Fichier:

PDF, 90 KB

english, 2001

96

Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures

A. A. Prokofiev, I. N. Yassievich, A. Blom, M. A. Odnoblyudov, K. Chao

Année:

2001

Langue:

english

Fichier:

PDF, 123 KB

english, 2001

97

Hot carrier effect on resonant state THz laser operation

Odnoblyudov, Maxim A, Prokofiev, Alexey A, Yassievich, Irina N, Altukhov, Igor V, Sinis, Valery P, Kagan, Miron S

Journal:

Semiconductor Science and Technology

Année:

2004

Langue:

english

Fichier:

PDF, 90 KB

english, 2004

98

On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy

Sharofidinov, Sh. Sh., Nikolaev, V. I., Smirnov, A. N., Chikiryaka, A. V., Nikitina, I. P., Odnoblyudov, M. A., Bugrov, V. E., Romanov, A. E.

Journal:

Année:

2016

Langue:

english

Fichier:

PDF, 549 KB

english, 2016

99

MBE Growth and Characterization of Composite InAlAs/In(Ga)As Vertically Aligned Quantum Dots

Kovsh, A. R., Zhukov, A. E., Egorov, A.Yu., Maleev, N. N., Mikhrin, S. S., Ustinov, V. M., Odnoblyudov, V. A., Musikhin, Yu. G., Livshits, D. A., Tsatsul'nikov, A. F., Maximov, M. V., Shernyakov, Yu.

Journal:

MRS Proceedings

Année:

1999

Langue:

english

Fichier:

PDF, 983 KB

english, 1999

100

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Resonant acceptor states in delta-doped SiGe nanostructures

Prokofiev, A. A., Odnoblyudov, M. A., Yassievich, Irina N., Chao, K. A., Alferov, Zhores I., Esaki, Leo

Année:

2012

Langue:

english

Fichier:

PDF, 74 KB

english, 2012