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Articles (109)
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A pure 1.5âÎ¼m electroluminescence from metal-oxide-silicon tunneling diode using dislocation network

Yu, X., Seifert, W., Vyvenko, O. F., Kittler, M., Wilhelm, T., Reiche, M.

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 634 KB

english, 2008

Mechanisms of Dislocation Network Formation in Si(001) Hydrophilic Bonded Wafers

Vdovin, Vladimir, Vyvenko, Oleg, Ubyivovk, Evgenii, Kononchuk, Oleg

Journal:

Solid State Phenomena

Année:

2011

Langue:

english

Fichier:

PDF, 2.16 MB

english, 2011

Orbital quantization in a system of edge Dirac fermions in nanoperforated graphene

Latyshev, Yu. I., Orlov, A. P., Frolov, A. V., Volkov, V. A., Zagorodnev, I. V., Skuratov, V. A., Petrov, Yu. V., Vyvenko, O. F., Ivanov, D. Yu., Konczykowski, M., Monceau, P.

Journal:

JETP Letters

Année:

2013

Langue:

english

Fichier:

PDF, 382 KB

english, 2013

Charge-controlled fixation of DNA molecules on silicon surface and electro-physical properties of Au–DNA–Si interface

Bazlov, N.V., Vyvenko, O.F., Sokolov, P.A., Kas’yanenko, N.A., Petrov, Yu V.

Journal:

Applied Surface Science

Année:

2013

Langue:

english

Fichier:

PDF, 871 KB

english, 2013

Electrical levels of dislocation networks in p- and n-type Si

Isakov, I, Bondarenko, A, Vyvenko, O, Vdovin, V, Ubyivovk, E, Kononchuk, O

Journal:

Journal of Physics Conference Series

Année:

2011

Langue:

english

Fichier:

PDF, 3.08 MB

english, 2011

Giant Poole-Frenkel effect for the shallow dislocation-related hole traps in silicon

Trushin, M, Vyvenko, O, Vdovin, V, Kittler, M

Journal:

Journal of Physics Conference Series

Année:

2011

Langue:

english

Fichier:

PDF, 2.96 MB

english, 2011

Scanning X-Ray Excited Optical Luminescence Microscopy as a New Tool for the Analysis of Recombination Active Defects in Multi-Crystalline Silicon

Trushin, Maxim, Vyvenko, O.F., Seifert, Winfried, Klossek, André, Zizak, Ivo, Kittler, Martin

Journal:

Solid State Phenomena

Année:

2011

Langue:

english

Fichier:

PDF, 1.21 MB

english, 2011

Microscopy of carbon steels: Combined AFM and EBSD study

Ulyanov, P.G., Usachov, D.Yu., Fedorov, A.V., Bondarenko, A.S., Senkovskiy, B.V., Vyvenko, O.F., Pushko, S.V., Balizh, K.S., Maltcev, A.A., Borygina, K.I., Dobrotvorskii, A.M., Adamchuk, V.K.

Journal:

Applied Surface Science

Année:

2013

Langue:

english

Fichier:

PDF, 736 KB

english, 2013

Nature of Dislocation-Related Deep Level Defects in CdS

Istratov, Andrei A., Vyvenko, O.F.

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 402 KB

1997

DX-like center generated by uniaxial strains of screw dislocations in CdS

Istratov, A. A., Vyvenko, O. F.

Journal:

Journal of Applied Physics

Année:

1996

Langue:

english

Fichier:

PDF, 360 KB

english, 1996

Luminescence from Germanium and Germanium on Silicon

Arguirov, Tzanimir, Kittler, Martin, Oehme, Michael, Abrosimov, Nikolay V., Vyvenko, Oleg F., Kasper, Erich, Schulze, Jörg

Journal:

Solid State Phenomena

Année:

2013

Langue:

english

Fichier:

PDF, 678 KB

english, 2013

Identification of dislocation-related luminescence participating levels in silicon by DLTS and Pulsed-CL profiling

Bondarenko, Anton, Vyvenko, Oleg, Isakov, Ivan

Journal:

Journal of Physics Conference Series

Année:

2011

Langue:

english

Fichier:

PDF, 594 KB

english, 2011

Dislocation Structure, Electrical and Luminescent Properties of Hydrophilically Bonded Silicon Wafer Interface

Bondarenko, Anton, Vyvenko, Oleg, Kolevatov, Iliya, Isakov, Ivan, Kononchuk, Oleg

Journal:

Solid State Phenomena

Année:

2011

Langue:

english

Fichier:

PDF, 579 KB

english, 2011

Recombination activity and electrical levels of dislocations in p-type Si∕SiGe structures: Impact of copper contamination and hydrogenation

Vyvenko, O. F., Kittler, M., Seifert, W.

Journal:

Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 366 KB

english, 2004

Cross-sectional electron-beam-induced current analysis of the passivation of extended defects in cast multicrystalline silicon by remote hydrogen plasma treatment

Vyvenko, O. F., Krüger, O., Kittler, M.

Journal:

Applied Physics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 297 KB

english, 2000

Kinetics of Hydrogen Motion via Dislocation Network in Hydrophilically Direct Bonded Silicon Wafers

Loshachenko, A.S., Vyvenko, Oleg F., Kononchuk, Oleg

Journal:

Solid State Phenomena

Année:

2013

Langue:

english

Fichier:

PDF, 592 KB

english, 2013

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - 1.5 μm Emission from a Silicon MOS-LED Based on a Dislocation Network

Kittler, M., Reiche, M., Yu, X., Arguirov, T., Vyvenko, O.F., Seifert, W., Mchedlidze, T., Jia, G., Wilhelm, T.

Année:

2006

Langue:

english

Fichier:

PDF, 352 KB

english, 2006

Energy filtration of secondary and backscattered electrons by the method of the retarding potential in scanning electron and ion microscopy

Mikhailovskii, V. Yu., Petrov, Yu. V., Vyvenko, O. F.

Journal:

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques

Année:

2015

Langue:

english

Fichier:

PDF, 1.26 MB

english, 2015

Depth Profiling of the Recombination Activity of Defects Measured by Temperature-Dependent Cross-Sectional EBIC

Vyvenko, O.F., Krüger, O., Kittler, Martin

Journal:

Solid State Phenomena

Année:

2001

Langue:

english

Fichier:

PDF, 659 KB

english, 2001

Minority Carrier Transient Spectroscopy of Copper-Silicide and Nickel-Disilicide Precipitates in Silicon

Vyvenko, O.F.

Journal:

Solid State Phenomena

Année:

1998

Langue:

english

Fichier:

PDF, 604 KB

english, 1998

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Regular Dislocation Networks in Silicon as a Tool for Novel Device Application

Kittler, Martin, Reiche, Manfred, Seifert, Winfried, Yu, X., Arguirov, T., Vyvenko, Oleg, Mchedlidze, Teimuraz, Wilhelm, Thomas

Année:

2006

Langue:

english

Fichier:

PDF, 745 KB

english, 2006

Impact of Low Temperature Hydrogenation on Recombination Activity of Dislocations in Silicon

Vyvenko, O.F., Kittler, Martin, Seifert, Winfried

Journal:

Solid State Phenomena

Année:

2005

Langue:

english

Fichier:

PDF, 445 KB

english, 2005

DX-Like Centers in Dislocated Compound Semiconductors: A New Aspect of the Interaction between Extended Defects and Impurities

Istratov, Andrei A., Vyvenko, O.F.

Journal:

Solid State Phenomena

Année:

1996

Fichier:

PDF, 573 KB

1996

Effect of helium ion beam treatment on the etching rate of silicon nitride

Petrov, Yu.V., Sharov, T.V., Baraban, A.P., Vyvenko, O.F.

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2015

Langue:

english

Fichier:

PDF, 901 KB

english, 2015

Dislocations in Silicon as a Tool to Be Used in Optics, Electronics and Biology

Kittler, Martin, Reiche, M., Arguirov, T., Mchedlidze, Teimuraz, Seifert, Winfried, Vyvenko, O.F., Wilhelm, T., Yu, X.

Journal:

Solid State Phenomena

Année:

2008

Langue:

english

Fichier:

PDF, 332 KB

english, 2008

Impact of NiSi2 Precipitates Electronic Structure on the Minority Carrier Lifetime in n-and p-Type Silicon

Trushin, M.V., Vyvenko, O.F., Seibt, Michael

Journal:

Solid State Phenomena

Année:

2008

Langue:

english

Fichier:

PDF, 519 KB

english, 2008

Impact of Hydrogenation on Electrical Properties of NiSi2 Precipitates in Silicon

Vyvenko, O.F., Bazlov, N.V., Trushin, M.V., Nadolinski, A.A., Seibt, Michael, Schröter, Wolfgang, Hahn, George T.

Journal:

Solid State Phenomena

Année:

2005

Langue:

english

Fichier:

PDF, 377 KB

english, 2005

Charge State of Copper-Silicide Precipitates in Silicon and its Application to the Understanding of Copper Precipitation Kinetics

Istratov, A.A., Vyvenko, O.F., Flink, C., Heiser, T., Hieslmair, H., Weber, E.R.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 473 KB

english, 1998

Investigation of the Defect Distribution in Polycrystalline Silicon

Zozime, A., Vyvenko, O.F., Hanke, I., Schröter, Wolfgang, Ahlborn, K., Heisig, K.

Journal:

Solid State Phenomena

Année:

1994

Fichier:

PDF, 503 KB

1994

Transport of Massless Dirac Fermions in Non-topological Type Edge States

Latyshev, Yu I., Orlov, A. P., Volkov, V. A., Enaldiev, V. V., Zagorodnev, I. V., Vyvenko, O. F., Petrov, Yu V., Monceau, P.

Journal:

Scientific Reports

Année:

2014

Langue:

english

Fichier:

PDF, 1.73 MB

english, 2014

Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States

Trushin, M., Vyvenko, Oleg F.

Journal:

Solid State Phenomena

Année:

2013

Langue:

english

Fichier:

PDF, 2.02 MB

english, 2013

Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers

Trushin, Maxim, Vyvenko, O.F., Mchedlidze, Teimuraz, Kononchuk, Oleg, Kittler, Martin

Journal:

Solid State Phenomena

Année:

2009

Langue:

english

Fichier:

PDF, 2.22 MB

english, 2009

AIP Conference Proceedings [AIP Publishing LLC INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013: Proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013 - Bologna, Italy (21–26 July 2013)] - Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

Bondarenko, Anton, Vyvenko, Oleg

Année:

2014

Langue:

english

Fichier:

PDF, 520 KB

english, 2014

Application of synchrotron-radiation-based x-ray microprobe techniques for the analysis of recombination activity of metals precipitated at Si/SiGe misfit dislocations

Vyvenko, O F, Buonassisi, T, Istratov, A A, Weber, E R, Kittler, M, Seifert, W

Journal:

Journal of Physics Condensed Matter

Année:

2002

Langue:

english

Fichier:

PDF, 552 KB

english, 2002

Critical analysis of weighting functions for the deep level transient spectroscopy of semiconductors

A. A. Istratov, O. F. Vyvenko, H. Hieslmair, E. R. Weber

Année:

1998

Langue:

english

Fichier:

PDF, 139 KB

english, 1998

Secondary Electrons Energy Distribution In Helium Ion Microscope And Contrast Manipulation

Petrov, Y., Vyvenko, O.

Journal:

Microscopy and Microanalysis

Année:

2012

Fichier:

PDF, 329 KB

2012

Oxygen-related defects: minority carrier lifetime killers in n-type Czochralski silicon wafers for solar cell application

Kolevatov, I., Osinniy, V., Herms, M., Loshachenko, A., Shlyakhov, I., Kveder, V., Vyvenko, O.

Journal:

Physica status solidi

Année:

2015

Langue:

english

Fichier:

PDF, 397 KB

english, 2015

Raman spectroscopy of monoatomic hydrogen at dislocations in silicon

Vysotskii, N, Loshachenko, A, Borisov, E, Vyvenko, O

Journal:

Journal of Physics Conference Series

Année:

2016

Langue:

english

Fichier:

PDF, 1.08 MB

english, 2016

Luminescence of a-screw dislocations in low-ohmic GaN

Medvedev, O S, Vyvenko, O F, Bondarenko, A S

Journal:

Journal of Physics Conference Series

Année:

2016

Langue:

english

Fichier:

PDF, 987 KB

english, 2016

Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon

Danilov, D.V., Vyvenko, O.F., Sobolev, N.A., Vdovin, V.I., Loshachenko, A.S., Shek, E.I., Aruev, P.N., Zabrodskiy, V.V.

Journal:

Solid State Phenomena

Année:

2015

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2015

On the luminescence of freshly introduceda-screw dislocations in low-resistance GaN

Medvedev, O. S., Vyvenko, O. F., Bondarenko, A. S.

Journal:

Semiconductors

Année:

2015

Langue:

english

Fichier:

PDF, 2.05 MB

english, 2015

AIP Conference Proceedings [Author(s) MEDICAL PHYSICS: Fourteenth Mexican Symposium on Medical Physics - México City, México (18–21 March 2016)] - Recombination-related properties of a-screw dislocations in GaN: A combined CL, EBIC, TEM study

Medvedev, O. S., Vyvenko, O. F., Bondarenko, A. S., Mikhailovskii, V. Yu., Ubyivovk, E. V., Peretzki, P., Seibt, M.

Année:

2016

Langue:

english

Fichier:

PDF, 785 KB

english, 2016

AIP Conference Proceedings [Author(s) MEDICAL PHYSICS: Fourteenth Mexican Symposium on Medical Physics - México City, México (18–21 March 2016)] - Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

Bazlov, N., Pilipenko, N., Vyvenko, O., Kotina, I., Petrov, Yu., Mikhailovskii, V., Ubyivovk, E., Zharinov, V.

Année:

2016

Langue:

english

Fichier:

PDF, 1.14 MB

english, 2016

Atomic configuration and charge state of hydrogen at dislocations in silicon

Vysotskii, N. V., Loshachenko, A. S., Vyvenko, O. F.

Journal:

Semiconductors

Année:

2017

Langue:

english

Fichier:

PDF, 607 KB

english, 2017

AIP Conference Proceedings [Author(s) MEDICAL PHYSICS: Fourteenth Mexican Symposium on Medical Physics - México City, México (18–21 March 2016)] - Plasmon-enhanced electron scattering in nanostructured thin metal films revealed by low-voltage scanning electron microscopy

Mikhailovskii, V., Petrov, Yu., Vyvenko, O.

Année:

2016

Langue:

english

Fichier:

PDF, 601 KB

english, 2016

Intersection Nodes of Basal Screw Dislocations as Luminous Quantum Dots in GaN

Medvedev, Oleg, Vyvenko, Oleg

Journal:

physica status solidi (RRL) - Rapid Research Letters

Année:

2017

Langue:

english

Fichier:

PDF, 850 KB

english, 2017

Band-Like Behavior of Localized States of Metal Silicide Precipitate in Silicon

Bondarenko, Anton, Vyvenko, Oleg

Journal:

Journal of Electronic Materials

Année:

2018

Langue:

english

Fichier:

PDF, 525 KB

english, 2018

Helium ion beam induced electron emission from insulating silicon nitride films under charging conditions

Petrov, Yu.V., Anikeva, A.E., Vyvenko, O.F.

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2018

Langue:

english

Fichier:

PDF, 1.06 MB

english, 2018

Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN

Medvedev, O., Vyvenko, O., Ubyivovk, E., Shapenkov, S., Bondarenko, A., Saring, P., Seibt, M.

Journal:

Journal of Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 2.37 MB

english, 2018

100

AIP Conference Proceedings [Author(s) STATE-OF-THE-ART TRENDS OF SCIENTIFIC RESEARCH OF ARTIFICIAL AND NATURAL NANOOBJECTS, STRANN-2018 - Moscow, Russia (17–19 October 2018)] - Correlation of structure and intrinsic luminescence of freshly introduced dislocations in GaN revealed by SEM and TEM

Medvedev, O. S., Vyvenko, O. F., Ubyivovk, E. V., Shapenkov, S. V., Seibt, M.

Année:

2019

Langue:

english

Fichier:

PDF, 1.71 MB

english, 2019