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51

Three-dimensional atom probe studies of an In[sub x]Ga[sub 1−x]N∕GaN multiple quantum well structure: Assessment of possible indium clustering

Galtrey, Mark J., Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J., Stokes, Debbie J., Clifton, Peter H., Cerezo, Alfred

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 645 KB

english, 2007

52

single quantum well structure

Hylton, Nicholas P., Dawson, Philip, Kappers, Menno J., McAleese, Clifford, Humphreys, Colin J.

Journal:

Physical Review B

Année:

2007

Langue:

english

Fichier:

PDF, 251 KB

english, 2007

53

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal

Oliver, Rachel A., Briggs, G. Andrew D., Kappers, Menno J., Humphreys, Colin J., Yasin, Shazia, Rice, James H., Smith, Jonathon D, Taylor, Robert A.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 373 KB

english, 2003

54

Dynamics of carrier redistribution processes in InGaN/GaN quantum well structures

Badcock, Tom J., Dawson, Phil, Davies, Matthew J., Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

Journal:

Physica status solidi

Année:

2014

Langue:

english

Fichier:

PDF, 335 KB

english, 2014

55

Low defect large area semi-polar (112) GaN grown on patterned (113) silicon

Pristovsek, Markus, Han, Yisong, Zhu, Tongtong, Frentrup, Martin, Kappers, Menno J., Humphreys, Colin J., Kozlowski, Grzegorz, Maaskant, Pleun, Corbett, Brian

Journal:

physica status solidi (b)

Année:

2015

Langue:

english

Fichier:

PDF, 5.35 MB

english, 2015

56

Morphological changes of InGaN epilayers during annealing assessed by spectral analysis of atomic force microscopy images

Oliver, Rachel A., Sumner, Joy, Kappers, Menno J., Humphreys, Colin J.

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 651 KB

english, 2009

57

A full free spectral range tuning of p-i-n doped gallium nitride microdisk cavity

Niu, Nan, Liu, Tsung-Li, Aharonovich, Igor, Russell, Kasey J., Woolf, Alexander, Sadler, Thomas C., El-Ella, Haitham A. R., Kappers, Menno J., Oliver, Rachel A., Hu, Evelyn L.

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 979 KB

english, 2012

58

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Zhu, Tongtong, Oehler, Fabrice, Reid, Benjamin P. L., Emery, Robert M., Taylor, Robert A., Kappers, Menno J., Oliver, Rachel A.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2013

59

Temporal variation in photoluminescence from single InGaN quantum dots

Rice, James H., Robinson, James W., Jarjour, Anas, Taylor, Robert A., Oliver, Rachel A., Briggs, G. Andrew D., Kappers, Menno J., Humphreys, Colin J.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 257 KB

english, 2004

60

Low threshold, room-temperature microdisk lasers in the blue spectral range

Aharonovich, Igor, Woolf, Alexander, Russell, Kasey J., Zhu, Tongtong, Niu, Nan, Kappers, Menno J., Oliver, Rachel A., Hu, Evelyn L.

Journal:

Applied Physics Letters

Année:

2013

Langue:

english

Fichier:

PDF, 877 KB

english, 2013

61

Growth modes in heteroepitaxy of InGaN on GaN

Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J., Briggs, G. Andrew D.

Journal:

Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 735 KB

english, 2005

62

A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures

Davies, Matthew J., Dawson, Philip, Massabuau, Fabien C.-P., Fol, Adrian Le, Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

Journal:

physica status solidi (b)

Année:

2015

Langue:

english

Fichier:

PDF, 656 KB

english, 2015

63

Segregation of In to Dislocations in InGaN

Horton, Matthew K., Rhode, Sneha, Sahonta, Suman-Lata, Kappers, Menno J., Haigh, Sarah J., Pennycook, Timothy J., Humphreys, Colin J., Dusane, Rajiv O., Moram, Michelle A.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 524 KB

english, 2015

64

Equilibrium critical thickness for misfit dislocations in III-nitrides

Holec, David, Zhang, Yucheng, Rao, D. V. Sridhara, Kappers, Menno J., McAleese, Clifford, Humphreys, Colin J.

Journal:

Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 689 KB

english, 2008

65

The Effect of Dislocation Density and Surface Morphology on the Optical Properties of InGaN/GaN Quantum Wells Grown on $r$-Plane Sapphire Substrates

Badcock, Tom J., Hao, Rui, Moram, Michelle A., Kappers, Menno J., Dawson, Phil, Humphreys, Colin J.

Journal:

Japanese Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 422 KB

english, 2011

66

Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds

Oehler, Fabrice, Vickers, Mary E., Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.

Journal:

Japanese Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 556 KB

english, 2013

67

Carrier Density Dependent Localization and Consequences for Efficiency Droop in InGaN/GaN Quantum Well Structures

Badcock, Tom J., Hammersley, Simon, Watson-Parris, Duncan, Dawson, Phil, Godfrey, Mike J., Kappers, Menno J., McAleese, Clifford, Oliver, Rachel A., Humphreys, Colin J.

Journal:

Japanese Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 381 KB

english, 2013

68

Evidence for Dark States in the Temperature Dependent Recombination Dynamics of InGaN/GaN Quantum Wells

Badcock, Tom J., Dawson, Phil, Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

Journal:

Japanese Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 542 KB

english, 2013

69

Carrier distributions in InGaN/GaN light-emitting diodes

Hammersley, Simon, Davies, Matthew J., Dawson, Philip, Oliver, Rachel A., Kappers, Menno J., Humphreys, Colin J.

Journal:

physica status solidi (b)

Année:

2015

Langue:

english

Fichier:

PDF, 783 KB

english, 2015

70

Dislocation Climb in c -Plane AlN Films

Fu, Wai Yuen, Kappers, Menno J., Zhang, Yucheng, Humphreys, Colin J., Moram, Michelle A.

Journal:

Applied Physics Express

Année:

2011

Langue:

english

Fichier:

PDF, 1.13 MB

english, 2011

71

Misfit dislocations in green-emitting InGaN/GaN quantum well structures

Costa, Pedro MFJ, Datta, Ranjan, Kappers, Menno J, Vickers, Mary E, Humphreys, Colin J

Journal:

MRS Proceedings

Année:

2005

Langue:

english

Fichier:

PDF, 140 KB

english, 2005

72

SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations

Oliver, Rachel, Kappers, Menno J., Sumner, Joy, Datta, Ranjan, Humphreys, Colin J.

Journal:

MRS Proceedings

Année:

2005

Langue:

english

Fichier:

PDF, 1.76 MB

english, 2005

73

Growth and characterization of semi-polar (11-22) GaN with in-situ SiNx interlayers

Hollander, Jonathan, McAleese, Clifford, Kappers, Menno, Humphreys, Colin

Journal:

MRS Proceedings

Année:

2006

Langue:

english

Fichier:

PDF, 846 KB

english, 2006

74

Origin of faceted surface hillocks on semi-polar (

Han, Yisong, Caliebe, Marian, Kappers, Menno, Scholz, Ferdinand, Pristovsek, Markus, Humphreys, Colin

Journal:

Journal of Crystal Growth

Année:

2015

Langue:

english

Fichier:

PDF, 2.43 MB

english, 2015

75

The impact of substrate miscut on the morphology of InGaN epitaxial layers subjected to a growth interruption

Jouvet, Nicolas, Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.

Journal:

Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 1.17 MB

english, 2013

76

Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

Griffiths, James T., Zhang, Siyuan, Rouet-Leduc, Bertrand, Fu, Wai Yuen, Bao, An, Zhu, Dandan, Wallis, David J., Howkins, Ashley, Boyd, Ian, Stowe, David, Kappers, Menno J., Humphreys, Colin J., Olive

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 2.18 MB

english, 2015

77

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Tang, Fengzai, Barnard, Jonathan S., Zhu, Tongtong, Oehler, Fabrice, Kappers, Menno J., Oliver, Rachel A.

Journal:

Applied Physics Letters

Année:

2015

Langue:

english

Fichier:

PDF, 2.17 MB

english, 2015

78

High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance

Maaskant, Pleun P., Shams, Haymen, Akhter, Mahbub, Henry, William, Kappers, Menno J., Zhu, Dandan, Humphreys, Colin J., Corbett, Brian

Journal:

Applied Physics Express

Année:

2013

Langue:

english

Fichier:

PDF, 3.04 MB

english, 2013

79

Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

Zhu, Tongtong, Griffiths, James T., Fu, Wai Yuen, Howkins, Ashley, Boyd, Ian W., Kappers, Menno J., Oliver, Rachel A.

Journal:

Superlattices and Microstructures

Année:

2015

Langue:

english

Fichier:

PDF, 2.67 MB

english, 2015

80

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

Zhu, Tongtong, Ding, Tao, Tang, Fengzai, Han, Yisong, Ali, Muhammad, Badcock, Tom, Kappers, Menno J., Shields, Andrew J., Smoukov, Stoyan K., Oliver, Rachel A.

Journal:

Crystal Growth & Design

Année:

2016

Langue:

english

Fichier:

PDF, 6.54 MB

english, 2016

81

Fluorescence microscopy investigation of InGaN-based light-emitting diodes

Kappers, Menno J., Presa, Silvino, Corbett, Brian, Maaskant, Pleun P.

Journal:

IET Optoelectronics

Année:

2016

Langue:

english

Fichier:

PDF, 547 KB

english, 2016

82

Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials

Tang, Fengzai, Moody, Michael P., Martin, Tomas L., Bagot, Paul A.J., Kappers, Menno J., Oliver, Rachel A.

Journal:

Microscopy and Microanalysis

Année:

2015

Langue:

english

Fichier:

PDF, 1.19 MB

english, 2015

83

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Sutherland, Danny, Zhu, Tongtong, Griffiths, James T., Tang, Fengzai, Dawson, Phil, Kundys, Dmytro, Oehler, Fabrice, Kappers, Menno J., Humphreys, Colin J., Oliver, Rachel A.

Journal:

physica status solidi (b)

Année:

2015

Langue:

english

Fichier:

PDF, 538 KB

english, 2015

84

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

Hammersley, Simon, Dawson, Phil, Kappers, Menno J., Massabuau, Fabien C.-P., Frentrup, Martin, Oliver, Rachel A., Humphreys, Colin J.

Journal:

Physica status solidi

Année:

2016

Langue:

english

Fichier:

PDF, 351 KB

english, 2016

85

Materials challenges for devices based on single, self-assembled InGaN quantum dots

Oliver, Rachel A, Jarjour, Anas F, Tahraoui, Abbes, Kappers, Menno J, Taylor, Robert A, Humphreys, Colin J

Journal:

Journal of Physics Conference Series

Année:

2007

Langue:

english

Fichier:

PDF, 520 KB

english, 2007

86

SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2005 - San Jose, California, United States (Saturday 22 January 2005)] Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX - Time-resolved dynamics in single InGaN quantum dots (Invited Paper)

Taylor, Robert A., Tsen, Kong-Thon, Song, Jin-Joo, Robinson, James W., Rice, James H., Jiang, Hongxing, Lee, Kwan H., Jarjour, Anas, Na, Jong H., Yasin, Shazia, Oliver, Rachel A., Kappers, Menno J., H

Année:

2005

Langue:

english

Fichier:

PDF, 325 KB

english, 2005

87

Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures

Hammersley, Simon, Kappers, Menno J., Massabuau, Fabien C.-P., Sahonta, Suman-Lata, Dawson, Phil, Oliver, Rachel A., Humphreys, Colin J.

Journal:

Physica status solidi

Année:

2016

Langue:

english

Fichier:

PDF, 491 KB

english, 2016

88

Investigating efficiency droop in InGaN/GaN quantum well structures using ultrafast time-resolved terahertz and photoluminescence spectroscopy

Dunn, Aniela, Spencer, Ben F., Hardman, Samantha J. O., Graham, Darren M., Hammersley, Simon, Davies, Matthew J., Dawson, Phil, Kappers, Menno J., Oliver, Rachel A., Humphreys, Colin J.

Journal:

Physica status solidi

Année:

2016

Langue:

english

Fichier:

PDF, 447 KB

english, 2016

89

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Christian, George M., Hammersley, Simon, Davies, Matthew J., Dawson, Philip, Kappers, Menno J., Massabuau, Fabien C.-P., Oliver, Rachel A., Humphreys, Colin J.

Journal:

Physica status solidi

Année:

2016

Langue:

english

Fichier:

PDF, 448 KB

english, 2016

90

Effect of electron blocking layers on the conduction and valence band profiles of InGaN/GaN LEDs

Hammersley, Simon, Dawson, Phil, Kappers, Menno J., Massabuau, Fabien C.-P., Frentrup, Martin, Oliver, Rachel A., Humphreys, Colin J.

Journal:

Physica status solidi

Année:

2016

Langue:

english

Fichier:

PDF, 280 KB

english, 2016

91

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a -plane and m -plane GaN substrates

Kundys, Dmytro, Sutherland, Danny, Davies, Matthew J., Oehler, Fabrice, Griffiths, James, Dawson, Philip, Kappers, Menno J., Humphreys, Colin J., Schulz, Stefan, Tang, Fengzai, Oliver, Rachel A.

Journal:

Science and Technology of Advanced Materials

Année:

2016

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2016

92

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Zhu, Tongtong, Gachet, David, Tang, Fengzai, Fu, Wai Yuen, Oehler, Fabrice, Kappers, Menno J., Dawson, Phil, Humphreys, Colin J., Oliver, Rachel A.

Journal:

Applied Physics Letters

Année:

2016

Langue:

english

Fichier:

PDF, 1.37 MB

english, 2016

93

X-ray reflectivity method for the characterization of InGaN/GaN quantum well interface

Massabuau, Fabien, Piot, Nicolas, Frentrup, Martin, Wang, Xiuze, Avenas, Quentin, Kappers, Menno, Humphreys, Colin, Oliver, Rachel

Journal:

physica status solidi (b)

Année:

2017

Langue:

english

Fichier:

PDF, 1013 KB

english, 2017

94

Mechanisms preventing trench defect formation in InGaN/GaN quantum well structures using hydrogen during GaN barrier growth

Massabuau, Fabien, Kappers, Menno, Humphreys, Colin, Oliver, Rachel

Journal:

physica status solidi (b)

Année:

2017

Langue:

english

Fichier:

PDF, 842 KB

english, 2017

95

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties

Massabuau, Fabien C-P., Rhode, Sneha L., Horton, Matthew K., O’Hanlon, Thomas J., Kovács, András, Zielinski, Marcin S., Kappers, Menno J., Dunin-Borkowski, Rafal E., Humphreys, Colin J., Oliver, Rache

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 7.20 MB

english, 2017

96

X-ray diffraction analysis of cubic zincblende III-nitrides

Frentrup, Martin, Lee, Lok Yi, Sahonta, Suman-Lata, Kappers, Menno J, Massabuau, Fabien, Gupta, Priti, Oliver, Rachel A, Humphreys, Colin J, Wallis, David J

Journal:

Journal of Physics D Applied Physics

Année:

2017

Langue:

english

Fichier:

PDF, 3.20 MB

english, 2017

97

Resonant photoluminescence studies of carrier localisation in c-plane InGaN/GaN quantum well structures

Blenkhorn, William, Schulz, Stefan, Tanner, Daniel, Oliver, Rachel, Kappers, Menno J, Humphreys, Colin J, Dawson, Philip

Journal:

Journal of Physics Condensed Matter

Année:

2018

Langue:

english

Fichier:

PDF, 442 KB

english, 2018

98

Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs

Humphreys, Colin J., Massabuau, Fabien C-P., Rhode, Sneha L., Horton, Matthew K., O’Hanlon, Thomas J., Kovacs, Andras, Zielinski, Marcin S., Kappers, Menno J., Dunin-Borkowski, Rafal E., Oliver, Rache

Journal:

Microscopy and Microanalysis

Année:

2018

Langue:

english

Fichier:

PDF, 730 KB

english, 2018

99

Effect of growth temperature and V/III-ratio on the surface morphology of MOVPE-grown cubic zincblende GaN

Lee, Lok Yi, Frentrup, Martin, Kappers, Menno J., Oliver, Rachel A., Humphreys, Colin J., Wallis, David J.

Journal:

Journal of Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 2.89 MB

english, 2018

100

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu—A Summary of Recent Results

Edwards, Paul, O’Donnell, Kevin, Singh, Akhilesh, Cameron, Douglas, Lorenz, Katharina, Yamaga, Mitsuo, Leach, Jacob, Kappers, Menno, Boćkowski, Michal

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 3.46 MB

english, 2018