K Wittmaack : rechercher sur Z-Library

Nuclear Instruments and Methods in Physics Research

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 333 KB

english, 1983

Background formation in SIMS analysis of hydrogen, carbon, nitrogen and oxygen in silicon

Nuclear Instruments and Methods in Physics Research

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 433 KB

english, 1983

Production of ions of the opposite charge in mass analysis using a quadrupole filter

International Journal of Mass Spectrometry and Ion Processes

Journal:

Année:

1986

Langue:

english

Fichier:

PDF, 865 KB

english, 1986

Determination of implantation profiles in solids by secondary ion mass spectrometry

J. Maul, F. Schulz, K. Wittmaack

Journal:

Année:

1972

Langue:

english

Fichier:

PDF, 139 KB

english, 1972

Non-Gaussian range profiles in amorphous solids

K. Wittmaack, F. Schulz, J. Maul

Journal:

Année:

1973

Langue:

english

Fichier:

PDF, 189 KB

english, 1973

Range parameter distortion in heavy ion implantation

P. Blank, K. Wittmaack

Journal:

Année:

1975

Langue:

english

Fichier:

PDF, 166 KB

english, 1975

On the mechanism of cluster emission in sputtering

Journal:

Année:

1979

Langue:

english

Fichier:

PDF, 367 KB

english, 1979

Projectile-energy dependence and line shape of ArL Auger spectra from argon bombarded silicon

Journal:

Année:

1979

Langue:

english

Fichier:

PDF, 388 KB

english, 1979

Secondary ion emission from polymer layers by atomic and molecular ion bombardment: Data evaluation based on linear-cascade sputtering theory

Journal:

International Journal of Mass Spectrometry

Année:

2006

Langue:

english

Fichier:

PDF, 209 KB

english, 2006

TOF-SIMS characterisation of spark-generated nanoparticles made from pairs of Ir–Ir and Ir–C electrodes

W. Szymczak, N. Menzel, W.G. Kreyling, K. Wittmaack

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 904 KB

english, 2006

Gas-phase ionisation of sputtered rare gas atoms

International Journal of Mass Spectrometry

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 772 KB

english, 2008

Accurate in situ calibration of the energy bandwidth and the zero-energy offset in SIMS analysis using magnetic sector field instruments

Klaus Wittmaack

Journal:

International Journal of Mass Spectrometry

Année:

2011

Langue:

english

Fichier:

PDF, 545 KB

english, 2011

Quantitative characterization of xenon bubbles in silicon: Correlation of bubble size with the damage generated during implantation

Klaus Wittmaack, Helmut Oppolzer

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Année:

2011

Langue:

english

Fichier:

PDF, 809 KB

english, 2011

An AES-SIMS study of silicon oxidation induced by ion or electron bombardment

W. Reuter, K. Wittmaack

Journal:

Applications of Surface Science

Année:

1980

Langue:

english

Fichier:

PDF, 1.42 MB

english, 1980

Implications in the use of reactive ion bombardment for secondary ion yield enhancement

Klaus Wittmaack

Journal:

Applications of Surface Science

Année:

1981

Langue:

english

Fichier:

PDF, 1.07 MB

english, 1981

Angular dependence of silicon oxide formation and gold segregation due to low-energy O2+ implantation

N. Menzel, K. Wittmaack

Journal:

Materials Science and Engineering: B

Année:

1992

Langue:

english

Fichier:

PDF, 416 KB

english, 1992

Instrumentation of kinetic spectroscopy-22: Circuitry for driving the injector of an electron accelerator

E. Janata, J. Budnick, H.-J. Wittmaack, J. Porsinger

Journal:

Radiation Physics and Chemistry

Année:

2008

Langue:

english

Fichier:

PDF, 154 KB

english, 2008

Corium spreading and coolability: CSC Project

G Cognet, H Alsmeyer, W Tromm, D Magallon, R Wittmaack, B.R Sehgal, W Widmann, L De Cecco, R Ocelli, G Azarian, D Pineau, B Spindler, G Fieg, H Werle, C Journeau, M Cranga, G Laffont

Journal:

Nuclear Engineering and Design

Année:

2001

Langue:

english

Fichier:

PDF, 670 KB

english, 2001

Memory properties of Si+ implanted gate oxides: from MOS capacitors to nvSRAM

J von Borany, T Gebel, K.-H Stegemann, H.-J Thees, M Wittmaack

Journal:

Solid-State Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 567 KB

english, 2002

Non-volatile memories based on Si+-implanted gate oxides

T. Gebel, J. von Borany, H.-J. Thees, M. Wittmaack, K.-H. Stegemann, W. Skorupa

Journal:

Microelectronic Engineering

Année:

2001

Langue:

english

Fichier:

PDF, 170 KB

english, 2001

Detailed evaluation of the analytical resolution function

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 137 KB

english, 2003

Apparent and real transient effects in SIMS depth profiling using oxygen bombardment

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 180 KB

english, 2003

Surface roughening of silicon under ultra-low-energy cesium bombardment

Y. Kataoka, K. Yamazaki, M. Shigeno, Y. Tada, K. Wittmaack

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 235 KB

english, 2003

Surprisingly large apparent profile shifts of As and Sb markers in Si bombarded with ultra-low-energy Cs ion beams

Y Kataoka, M Shigeno, Y Tada, K Wittmaack

Journal:

Klaus Wittmaack, Wilfried Szymczak, Gerald Hoheisel, Wilfried Tuszynski

Année:

2003

Langue:

english

Fichier:

PDF, 152 KB

english, 2003

Time-of-flight secondary ion mass spectrometry of matrix-diluted oligo- and polypeptides bombarded with slow and fast projectiles: positive and negative matrix and analyte ion yields, background signals, and sample aging

Journal:

Journal of the American Society for Mass Spectrometry

Année:

2000

Langue:

english

Fichier:

PDF, 481 KB

english, 2000

Analysis of Defect Annealing in Monocrystalline Gold Foils after Gold Ion Irradiation

physica status solidi (b)

Journal:

Année:

1970

Langue:

english

Fichier:

PDF, 851 KB

english, 1970

Effect of water treatment on analyte and matrix ion yields in matrix-assisted time-of-flight secondary ion mass spectrometry: the case of insulin in and on hydroxycinnamic acid

Wilfried Szymczak, Klaus Wittmaack

Journal:

Rapid Communications in Mass Spectrometry

Année:

2002

Langue:

english

Fichier:

PDF, 427 KB

english, 2002

Peak or centroid — which parameter is better suited for quantifying apparent marker locations in low-energy sputter depth profiling with reactive primary ion beams?

K. Wittmaack, E. Hammerl, I. Eisele, S. B. Patel

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 120 KB

english, 2001

Neutralization phenomena observed with secondary ions originating from inner-shell excitation

Klaus Wittmaack

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 223 KB

english, 2011

A. Benninghoven, C. A. Evans jr, R. A. Powell, R. Shimizu and R. A. Storms. Secondary ion mass spectrometry: Proceedings of the second international conference on secondary ion mass spectrometry (SIMS II). Springer Series in Chemical Physics, Vol. 9. Springer, Berlin, 1979, xiii + 298 pp., 234 Figs. DM58.00 $34.30 (approx)

Journal:

Année:

1981

Langue:

english

Fichier:

PDF, 276 KB

english, 1981

Element-Specific broadening effects in SIMS depth profiling of light impurities implanted in silicon

W. Wach, K. Wittmaack

Journal:

Année:

1982

Langue:

english

Fichier:

PDF, 366 KB

english, 1982

Charge compensation in SIMS analysis of polymer foils using negative secondary ions

Journal:

Applied Physics A: Materials Science & Processing

Année:

1987

Langue:

english

Fichier:

PDF, 412 KB

english, 1987

Comparison of profile tailing in SIMS analyses of various impurities in silicon using nitrogen, oxygen, and neon ion beams at near-normal incidence

Y. Homma, K. Wittmaack

Journal:

Année:

1990

Langue:

english

Fichier:

PDF, 730 KB

english, 1990

Raster scanning depth profiling of layer structures